半導体レ-ザの製造方法
文献类型：专利
| 作者 | 堀川 英明; 和田 浩; 的場 昭大; 川原 正人 |
| 发表日期 | 1994-01-26 |
| 专利号 | JP1994007639B2 |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To decrease the number of crystal growth during a manufacturing process, and to reduce manufacturing cost by forming a current constriction layer, a buffer layer, a lower-side clad layer, an active layer and an optical waveguide layer on a substrate through liquid-phase epitaxy, shaping a wave form to the surface of the optical waveguide layer and continuously forming an upper-side clad layer and a cap layer on the optical waveguide layer in succession through second liquid-phase epitaxy. CONSTITUTION:A layer 35 such as an N-type InP layer 35 as a second conduction InP layer functioning as a current constriction layer, a layer such as a P-type GaInAsP layer 37 as a first conduction type buffer layer, a layer such as a P-type InP layer 39 as a first conduction type lower-side clad layer, a layer such as a GaInAsP layer 41 as an active layer, and a layer such as an N-type GaInAsP layer 43 as a second conduction type optical waveguide layer are shaped continuously on a substrate 31 containing a groove 33 in succession through first liquid-phase epitaxy, thus acquiring wafer structure. A wave form having proper pitches and depth is formed to the surface of the optical waveguide layer 43 through a conventional method. An N-type InP layer as a second conduction type upper-side clad layer and an N-type GaInAsP layer as a second conduction type cap layer are formed on the N-type GaInAsP optical waveguide layer 43 through a second liquid-phase epitaxy. |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1985-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 堀川 英明,和田 浩,的場 昭大,等. 半導体レ-ザの製造方法. JP1994007639B2. 1994-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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