半導体レーザ素子
文献类型：专利
| 作者 | 渡部 泰弘; 橋本 昌育; 田中 堅太郎 |
| 发表日期 | 1997-05-30 |
| 专利号 | JP2657065B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To make a threshold current low, to make an operating current low, to be used easily and to lower a noise due to returned light by specifying a mixed crystal ratio of Al in a clad layer, a length of a resonator and a current constriction width. CONSTITUTION:A length (l) of a Fabry resonator is set to 100mum or longer and 200mum or shorter, and a mixed crystal ratio of Al in clad layers 3, 5 is set to 0.3-0.6; alternatively, a thickness of an active layer 4 is set to 0.1mum or lower, and a current constriction width W is set to 3-7mum; alternatively, they are combined. By this setup, it is possible to prevent the differential quantum efficiency from being lowered, to lower a threshold current, to make the mode selectivity inside the resonator large, to stabilize an oscillation, to reduce a noise due to returned light, to be used easily and to make a life long. |
| 公开日期 | 1997-09-24 |
| 申请日期 | 1988-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 渡部 泰弘,橋本 昌育,田中 堅太郎. 半導体レーザ素子. JP2657065B2. 1997-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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