Semiconductor laser element
文献类型：专利
| 作者 | SUYAMA NAOHIRO; KONDO MASAFUMI; SASAKI KAZUAKI; TAKAHASHI KOUSEI; HOSODA MASAHIRO; HAYAKAWA TOSHIRO |
| 发表日期 | 1990-07-11 |
| 专利号 | JP1990178987A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an astigmatic difference and to prevent the astigmatic difference from varying due to variation in output power by forming a first waveguide mechanism of a light absorption layer outside a groove and a layer thickness region of a first clad layer protruding into the groove, and increasing the thickness of a second clad layer of a stripelike region larger than that of a region except the region to form a second waveguide mechanism. CONSTITUTION:A first waveguide mechanism consists of a light absorption layer 1 outside a stripelike groove 10 of a width W1 and a region having a thickness larger than that of a first clad layer 3 protruding into a groove 10. The thickness of a second clad layer 5 in a stripelike region of a width W2 is larger than that of a second clad layer 5 in a region except the region in the stripelike region of the width W2 to form a second waveguide mechanism, and the groove width W1 is larger than the region width W2. A light generated in an active layer 4 is guided by the second waveguide mechanism on the basis of a refractive index difference of narrow width. Thus, an astigmatic difference can be reduced, and variation in the astigmatic difference due to output fluctuation is prevented. |
| 公开日期 | 1990-07-11 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUYAMA NAOHIRO,KONDO MASAFUMI,SASAKI KAZUAKI,et al. Semiconductor laser element. JP1990178987A. 1990-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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