Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269381A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a reproducible cavity length and pitch width by forming marks which show positions of resonator faces of respective semiconductor laser devices to be formed on semiconductor wafers where patterns are formed. CONSTITUTION:After making five layers; N-type GaAs layer 6, N-type AlGaAs layer 7, non-doping GaAs layer 8, P-type AlGaAs layer 9, P-type GaAs layer 10 grow in sequence on an N-type substrate 5, while a nitriding silicon plasma CVD film is extensively coated. Subsequently, areas applied by an electric current are removed by etching through a photolithography process and are covered by a laminated electrode 20 of Cr and Au. The electrode 20 separates each laser through the photolithography so that its laser can be driven independently and forms marks 100 for identification in the event of cleaving. While, after forming the laminated electrode 21 of AuGe and Au at the back side of the above substrate, ohmic contact is formed by thermal diffusion. Using the marks 100 for identification, cleaving is carried out along lines of a-A, a'-A', resulting in the formation of resonator faces 16 and 17. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Manufacture of semiconductor laser device. JP1987269381A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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