光双安定集積素子
文献类型：专利
| 作者 | 寺門 知二 |
| 发表日期 | 1994-01-26 |
| 专利号 | JP1994007623B2 |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光双安定集積素子 |
| 英文摘要 | PURPOSE:To obtain a rapidly operatable optical bistable integrated element by providing a layered light-receiving element directly on a distributed feedback semiconductor laser provided with a secondary or higher diffraction grating on a wave guide, so that the scattered light from the diffraction grating is reabsorbed by the light-receiving element. CONSTITUTION:A P type clad layer 106, an active layer 107, a guide layer 108 having secondary diffraction grating and first and second N type clad layers 109 and 110 are layered on a P type InP substrate 105 to form a distributed feedback semiconductor laser 102. An optical transistor 103 consisting of a collector layer 113, a base layer 112 and an emitter layer 111 is provided directly on a part of the laser 102. Trigger current is supplied to the laser 102 by incident light applied to the light-receiving surface 116 of the transistor 103, whereby the laser starts oscillation. Since the diffraction grating of the laser is secondary or higher, a part of the laser beams is scattered and fed back to the transistor side, and therefore an optical bistable element 101 operates in a bistable manner. Since the laser used in this invention has a high current- light conversion efficiency, the current amplifying factor of the optical transistor can be decreased and therefore the optical bistable integrated element is allowed to operate more rapidly as that much. |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1984-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88949]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | 寺門 知二. 光双安定集積素子. JP1994007623B2. 1994-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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