Semiconductor light emitting element
文献类型：专利
| 作者 | FUKUI TAKASHI; HORIKOSHI YOSHIHARU |
| 发表日期 | 1982-11-18 |
| 专利号 | JP1982187986A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a highly efficient light emission diode of a visible rays band by a method wherein indirect transition-type semiconductor crystal, which does not have light emission property originally is given a super lattice composition and is used as an activation layer. CONSTITUTION:An activation layer 3, made of a semiconductor super lattice composition in which a periodical construction is composed by piling semiconductor crystal layers, each of which has a cartain thickness of 500Angstrom and has a lattice constant identical with a semiconductor crystal layer with an indirect transition-type band gap, for instance a 100 plain GaP substrate 1 and has small electron affinity and large band gap, reciprocally on the substrate 1, is composed of, for instance, GaP-AlGaP. And on and under the activation layer 3, clad layers 2 and 4 composed of the same semiconductor material as the semiconductor crystal of the super lattice which has wider band gap or of a semiconductor which has wide band gap and small refractive index, for instance AlGaP are formed. |
| 公开日期 | 1982-11-18 |
| 申请日期 | 1981-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | FUKUI TAKASHI,HORIKOSHI YOSHIHARU. Semiconductor light emitting element. JP1982187986A. 1982-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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