Manufacture of semiconductor laser device
文献类型：专利
| 作者 | OKUMURA TOSHIYUKI; INOGUCHI KAZUHIKO; ATSUNUSHI FUMIHIRO; TAKIGUCHI HARUHISA |
| 发表日期 | 1992-04-13 |
| 专利号 | JP1992111382A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To be hardly affected thermally by a method wherein the surface at the upper part of a mesa part is set to the same height as or lower than the surface on both sides of it and the side of an epitaxial layer is mounted facedown. CONSTITUTION:An n-InP thin film 12' (0.7mum in thickness) and a Ga0.24In0.76As0.55 P0.45 thin film 13' (0.1mum in thickness) are grown sequentially on an n-InP substrate 11 on which an inverted mesa-shared ridge (8mum in height; 3mum in width) has been formed. At this time, a multilayer film of a double hetero-structure is formed on a mesa part. The multilayer film is constituted of an n-InP buffer layer 12 and a Ga0.24In0.76As0.55P0.45 active layer 13. In succession, a p-InP clad layer 14 (2.0mum in thickness), a p-Ga0.53In0.47As car layer 15 (0.5mum in thickness) and an n-InP surface semiconductor layer 16 (8mum in thickness) are grown sequentially. Then, a swelling part of the n-InP surface semiconductor layer 16 situated at the upper part of the mesa part is etched selectively and removed; its height is made to the same height as that on both sides of it. Lastly, an n-side electrode 18 is formed on the rear of the n-InP substrate 11, and a p-side electrode 19 is formed on the surface of an SiO2 insulating film 17 and on the surface of the p-Ga0.53In0.47 cap layer 15. |
| 公开日期 | 1992-04-13 |
| 申请日期 | 1990-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88973]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | OKUMURA TOSHIYUKI,INOGUCHI KAZUHIKO,ATSUNUSHI FUMIHIRO,et al. Manufacture of semiconductor laser device. JP1992111382A. 1992-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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