Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
文献类型：专利
| 作者 | OHKI, YUTAKA; TSUKIJI, NAOKI; YOSHIDA, JUNJI; HAYAMIZU, NAOKI; SHIMIZU, HIROSHI |
| 发表日期 | 2004-03-25 |
| 专利号 | US20040057485A1 |
| 著作权人 | FURUKAWA ELECTRIC CO. LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device, semiconductor laser module, and optical fiber amplifier |
| 英文摘要 | An n-InP buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are sequentially grown on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are grown adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer, and the p-InP spacer layer. A p-InP cladding layer, a p-GalnAsP contact layer, and a p-side electrode are grown on the p-InP spacer layer and the n-InP blocking layer. An n-side electrode is disposed on a rear surface of the n-InP substrate. A grating is disposed within the p-InP spacer layer. The grating selects a light of which number of longitudinal modes is equal to or more than 2 and equal to or less than 60, each of which has an intensity difference equal to or less than 10 decibels from a maximum intensity. |
| 公开日期 | 2004-03-25 |
| 申请日期 | 2003-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO. LTD., THE |
| 推荐引用方式 GB/T 7714 | OHKI, YUTAKA,TSUKIJI, NAOKI,YOSHIDA, JUNJI,et al. Semiconductor laser device, semiconductor laser module, and optical fiber amplifier. US20040057485A1. 2004-03-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。