Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIHASHI YUTAKA |
| 发表日期 | 1990-08-27 |
| 专利号 | JP1990214185A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser with a low threshold value with improved reproduction and yield by performing ion implantation of first conductive and second conductive impurities ions from aslant upper direction of opposite direction for the mask length of mask for stripe-shaped implanted ion elements to form doped regions. CONSTITUTION:A p-type or high-resistance clad layer 2, a quantum well active layer 3, an n-type or high-resistance clad layer 4, and a GaAs contact layer 5 are subjected to epitaxial growth in sequence on a semi-insulation GaAs substrate 1 and a stripe-shaped mask 6 for implantation ion elements consisting of photo resist is formed. Then, a p-type and n-type impurities atom ion is ion-implanted from aslant upper direction of opposite direction for the mask 6 for implantation ion elements and then p-type and n-type doped regions 8 and 7 are formed. Thus, it becomes possible to determine the width of an active region 9 in self-aligned manner without mask matching. Therefore, it is possible to obtain a horizontal semiconductor layer of low-threshold value oscillation with improved reproduction properties and yield. |
| 公开日期 | 1990-08-27 |
| 申请日期 | 1989-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA. Manufacture of semiconductor laser. JP1990214185A. 1990-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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