External cavity semiconductor laser
文献类型：专利
| 作者 | MOORADIAN, ARAM |
| 发表日期 | 1990-11-01 |
| 专利号 | WO1990013161A1 |
| 著作权人 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | External cavity semiconductor laser |
| 英文摘要 | An external cavity semiconductor laser (10) comprising a resonance cavity (12, 16) coupled to a diode laser (11). The cavity may contain a lens (14) or lens system (14, 24) or may be constructed as an optical waveguide (30). The external cavity (12, 16) may also contain a nonlinear optical material (32) to produce light of a frequency which is higher than that produced by the semiconductor laser. The use of an external cavity (12, 16) insures the single mode and/or single frequency operation of the semiconductor laser (10). |
| 公开日期 | 1990-11-01 |
| 申请日期 | 1990-04-11 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88988]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | MOORADIAN, ARAM. External cavity semiconductor laser. WO1990013161A1. 1990-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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