Manufacture of ridge waveguide type semiconductor laser element
文献类型：专利
| 作者 | OKUBO NORIO; KASUKAWA AKIHIKO |
| 发表日期 | 1990-08-13 |
| 专利号 | JP1990203583A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of ridge waveguide type semiconductor laser element |
| 英文摘要 | PURPOSE:To concentrate current in an active layer of a mesa region by implanting ion into the part except a mesa region formed by etching a part of multilayer semiconductor. CONSTITUTION:On a P-type InP substrate 1, the following are epitaxially grown in order; a P-type InP buffer layer 2, a P-type InP clad layer 3, an InGaAsP active layer 4, an N-type InP clad layer 5, and an N-type InGaAsP cap layer 6. On a multilayer semiconductor substrate formed in this manner, an SiO2 film 8 is formed; by using the film 8 as a mask, the part except the mask is irradiated with oxygen beam from above by using RIBE; the active layer 4 is dry-etched to a specified depth, thereby forming a T-shaped semiconductor substrate 10 having a mesa region on the film 8. Then, by implanting proton in the part except the mesa region, a highly resistive layer 13 is formed. Thereby, current can be concentrated in the active layer 4 in the mesa region, so that the formation of an SiO2 film as an insulating film is unnecessitated. |
| 公开日期 | 1990-08-13 |
| 申请日期 | 1989-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88992]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | OKUBO NORIO,KASUKAWA AKIHIKO. Manufacture of ridge waveguide type semiconductor laser element. JP1990203583A. 1990-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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