Manufacture of visible ray semiconductor laser
文献类型：专利
| 作者 | DOUMEN MEGUMI; TANAHASHI TOSHIYUKI |
| 发表日期 | 1992-04-28 |
| 专利号 | JP1992127594A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of visible ray semiconductor laser |
| 英文摘要 | PURPOSE:To lessen a non-luminous recombination speed at an interface between a clad layer and an active layer by a method wherein an AlGaInP clad layer, a GaInP active layer, and an AlGaInP clad layer are successively grown on a substrate, where the growth temperature of the clad layers concerned is set higher than a certain value. CONSTITUTION:A buffer layer 12, an N-side clad layer 13, an active layer 14, a P-side clad layer 15, and a cap layer 16 are grown on a substrate 11 through an organic metal chemical vapor deposit method. At the growth of these layers, it is necessary that both the clad layers 13 and 15 are grown at a temperature of 730 deg.C or above. By this setup, a deep level density can be set 10[cm] or below in the clad layers, so that a component related to the deep level are prevented from affecting an interface recombination speed. The interface recombination speed is related only to the original component of the interface, non-luminous recombination is reduced, so that a semiconductor laser of this design can be improved in light emission efficiency. |
| 公开日期 | 1992-04-28 |
| 申请日期 | 1990-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88993]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | DOUMEN MEGUMI,TANAHASHI TOSHIYUKI. Manufacture of visible ray semiconductor laser. JP1992127594A. 1992-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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