Visible light semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; KANEIWA SHINJI; YAMAMOTO SABUROU; YANO MORICHIKA |
| 发表日期 | 1985-04-30 |
| 专利号 | JP1985076183A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To establish long-life operating characteristics by constituting an active layer or a light guide layer formed on a GaAlAs layer with particular crystals of five elements mixed crystal and producing the laser element with the superior quality crystals of InGaAlAsP. CONSTITUTION:When an active layer is caused to epitaxially grow on a GaAlAs clad layer, crystals of five mixed elements consisting of In, Ga, Al, As and P are used for the active layer. On a (100) P-GaAs substrate 1, an N-GaAs current entrapping layer 2 is caused to grow and thereafter stripe grooves are formed by chemical etching with use of photo-lithography. These stripe grooves serve as current paths from which the current entrapping layer 2 has been removed. Then, a P-Ga0.2Al0.8As clad layer 3, non-doped In0.28(Ga0.62Al0.38)0.72As0.45 P0.55 active layer 4, an N-Ga0.2Al0.8As clad layer 5 and an N-GaAs cap layer 6 are caused to grow subsequently by the liquid phase epitaxial growth. Au-Ge-Ni and Au-Zn are then vapor deposited as an N-side electrode 7 and a P-side electrode 8, respectively, and heated to form the same. In such a manner, a semiconductor laser element of double heterojunction type is produced. |
| 公开日期 | 1985-04-30 |
| 申请日期 | 1983-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89003]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,KANEIWA SHINJI,YAMAMOTO SABUROU,et al. Visible light semiconductor laser element and manufacture thereof. JP1985076183A. 1985-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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