Semiconductor light emitting device and light modulation
文献类型：专利
| 作者 | KOTAKI YUJI |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175277A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and light modulation |
| 英文摘要 | PURPOSE:To control oscillation frequency by light, by making highly intensity- modulated light signals come in the phase modulating region of a semiconductor laser having a reflecting mirror of a diffraction grating an changing the refractive index of a guide layer in the above region, thereby varying the light wavelength. CONSTITUTION:When the frequency of a light emitting wavelength 55mum is modulated, for example, by 3mum signal light incidence, an n-type guide layer 3 absorbs inputted lights. In such a case, for example, as a forbidden band width lambdag is 4mum and a p-type clad layer 5 is an optical confinement layer and further, is penetrated by the inputted lights, for example, InP has lambdag of 0.9mum. The selection reference of the forbidden band width is that the wavelength of the guide layer which is to absorb inputted lights is longer than each wavelength of the inputted lights and the wavelength of a clad layer which locates at the upper side of the guide layer and is to transmit inputted lights is shorter than that of the inputted lights. In such a case, fundamental light emitting wavelength is adjusted by voltages applied to the phase adjusting region and the diffraction grating region of a semiconductor laser. If AM lights of 3mum come into the phase adjusting region through a transparent electrode, the guide layer absorbs the lights and then, refractive index varies according to their light intensity. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89008]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor light emitting device and light modulation. JP1989175277A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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