中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser structure including quantum dot

文献类型:专利

作者OH, DAE KON; LEE, JIN HONG; KIM, JIN SOO; HONG, SUNG UI; KWACK, HO SANG
发表日期2007-06-14
专利号US20070133639A1
著作权人ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
国家美国
文献子类发明申请
其他题名Semiconductor laser structure including quantum dot
英文摘要Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
公开日期2007-06-14
申请日期2006-11-09
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/89019]  
专题半导体激光器专利数据库
作者单位ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式
GB/T 7714
OH, DAE KON,LEE, JIN HONG,KIM, JIN SOO,et al. Semiconductor laser structure including quantum dot. US20070133639A1. 2007-06-14.

入库方式: OAI收割

来源:西安光学精密机械研究所

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