Semiconductor device and method of fabricating semiconductor device
文献类型：专利
| 作者 | YASUTOMO KAJIKAWA |
| 发表日期 | 1997-03-26 |
| 专利号 | GB2304998A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method of fabricating semiconductor device |
| 英文摘要 | A semiconductor device, such as a p-HEMT or a quantum well laser, includes a semiconductor base substrate (101 or 121) having a lattice constant and a surface; and a strained layer (3 or 24) grown on the surface of the semiconductor base substrate and comprising a semiconductor having a zinc-blende crystal structure with a lattice constant different from that of the semiconductor base substrate. The interface between the semiconductor base substrate and the strained layer is in a crystal plane which satisfies the relationship of (1 - * small Greek nu * cos 2 * small Greek alpha *)/cos * small Greek lambda * > 2(1 - * small Greek nu */4), where * small Greek nu * is the Poisson ratio, * small Greek alpha * is the angle between the Burgers vector and the dislocation line, and * small Greek lambda * is the angle between the Burgers vector and the direction in the interface, normal to the dislocation line, and the strained layer is epitaxially grown on the surface of the semiconductor base substrate without generating lattice-mismatch dislocations. When a strained InGaAs layer grown as described above is employed as a channel layer of a p-HEMT, the In composition of this layer becomes larger than that of a channel layer grown on a (001)-oriented substrate, without generating dislocations, whereby the electron mobility in the channel layer is increased and the noise characteristics in high frequency bands are improved. Further, since the thickness of the channel layer becomes thicker than that of a channel layer grown on a (001)-oriented substrate, without generating dislocations, the sheet electron concentration is increased, whereby the high-output characteristics of the p-HEMT are improved. |
| 公开日期 | 1997-03-26 |
| 申请日期 | 1996-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89021]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YASUTOMO KAJIKAWA. Semiconductor device and method of fabricating semiconductor device. GB2304998A. 1997-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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