Liquid phase epitaxial growth apparatus
文献类型：专利
| 作者 | OONAKA SEIJI; HASE NOBUYASU |
| 发表日期 | 1983-10-25 |
| 专利号 | JP1983182223A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth apparatus |
| 英文摘要 | PURPOSE:To obtain a crystal layer with less abnormal growth by executing liquid phase epitaxial growth utilizing a cover for solution having a thermal conductivity which is lower than that of a substrate supporting means. CONSTITUTION:Heat radiation from the upper part of crystal growth solution 7 is kept lower than the conventional one using a cover 24 for the solution made of quartz having a thermal conductivity lower than that of conventional high purity carbon. Thereby, the distance between isothermal lines 25 within the solution 7 as it goes toward the lower part, not generating conventional convection. Therefore, abnormal growth is not generated at the edge part of a semiconductor substrate 5. |
| 公开日期 | 1983-10-25 |
| 申请日期 | 1982-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OONAKA SEIJI,HASE NOBUYASU. Liquid phase epitaxial growth apparatus. JP1983182223A. 1983-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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