Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OKADA MASATO |
| 发表日期 | 1990-03-02 |
| 专利号 | JP1990063183A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve reliability and manufacture yield and reduce the cost by eliminating oxidation of a regrown interface to improve crystallizability by inserting a GaAs melt back layer between a block layer and a second upper cladding layer. CONSTITUTION:In a liquid phase epitaxy device, a GaAs melt back layer 12 and a GaAs etching stopper layer 10 existent on the bottom of a groove 6 for a current path are removed by melt back using a GaAs or Ga-Al-As melt. Successively, a P type AlzGa1-zAs cap layer 7 and a P type GaAs contact layer 8 are formed by making use of liquid phase epitaxial growth. With forward voltage applied across electrodes 9a, 9b, stable lasing is established in a transverse mode. The cap layer 7 can be grown without exposing an upper cladding layer 4 to the atmosphere with the aid of the GaAs etching stopper layer 10 and an n type AlpGa1-pAs current blocking layer 11, so that crystallizability along a regrown interface is improved to yield a highly reliable semiconductor laser device. |
| 公开日期 | 1990-03-02 |
| 申请日期 | 1988-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKADA MASATO. Semiconductor laser device and manufacture thereof. JP1990063183A. 1990-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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