Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | KAWAI YOSHIO; IMANAKA KOUICHI; WATANABE AKIRA; FUKUNAGA TOSHIAKI |
| 发表日期 | 1985-05-27 |
| 专利号 | JP1985094783A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify the structure and to reduce the number of manufacturing steps by narrowing the widths of cap layers of lower side from the cap layer as compared with those of the cap layer, and electrically separating adjacent light emitting elements at the groove therebetween. CONSTITUTION:Light emitting element regions (a), (b), (c) are selectively etched through a V-groove 7 formed on a semiconductor light emitting body 11, and the first clad layer 2, an active layer 3 and the second clad layer 4 measured in the direction parallel to the surface of the substrate and vertical to the light emitting direction are narrowed in width than the cap layer 5. An etchant for etching only one of the two materials is used for the selective etching so that the layer 5 is not etched at the GaAs layer, but the second clad layer 4 is etched at the GaAlAs layer. Further, the layer 3 is of GaAs layer but has extremely reduced thickness, and it is etched together with the first layer 2 made of GaAlAs material, and the overhang 14 of the length (d) is projected at the upper side of the groove 13. Eventually, metal electrode layers 9a, 9b, 9c are adhered to the light emitting regions (a), (b), (c). |
| 公开日期 | 1985-05-27 |
| 申请日期 | 1983-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAWAI YOSHIO,IMANAKA KOUICHI,WATANABE AKIRA,et al. Semiconductor light emitting device and manufacture thereof. JP1985094783A. 1985-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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