Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | MISE KAZUAKI |
| 发表日期 | 1989-08-02 |
| 专利号 | JP1989192189A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable not only the formation of a groove without a strict control and a blocking layer on a substrate through a single process of growing a crystal but also these operations to be done at a high yield rate by a method wherein a groove wedge-shaped and provided with a vertical part in section is formed on a substrate extending in a stripe, and a crystal growth is performed onto the substrate in a single process. CONSTITUTION:A groove 21 is formed on a substrate 11 of a p-type InP single crystal through an etching. The groove 21 is shaped into a wedge form provided with a vertical part in section. A current blocking layer 31 of an n-type InP, a buffer layer 41 of a p-type InP, an active layer 61 of an InGaAsP, and a clad layer 71 of an n-type InP are continuously grown in succession through a liquid phase epitaxial growth performed once. In this process, if the buffer layer 41 is attached to be thicklish, the active layer 61 is shaped into a continuous layer, and if the buffer layer 41 is attached to be thinnish, the active layer 61 is separately provided above the groove 21, and when a laser is made to oscillate, the oscillation is simlified to be in a lateral mode. |
| 公开日期 | 1989-08-02 |
| 申请日期 | 1988-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | MISE KAZUAKI. Manufacture of semiconductor light emitting element. JP1989192189A. 1989-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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