Semiconductor laser device
文献类型：专利
| 作者 | KATSUYAMA TSUKURU |
| 发表日期 | 1990-12-26 |
| 专利号 | JP1990310985A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve injection efficiency of a carrier through distortion at an interface and also to reduce a loss by allowing a well layer and a barrier layer of a multiquantum well layer to have lattice mismatchings which are opposite each other against first and second clad layers. CONSTITUTION:A quantum well layer 3 is in contact with a lower clad layer 2 through a well layer 3W1, and is in contact with an upper clad layer 4 through a barrier layer 3B3. Directions of lattice mismatchings to the lower clad layer 2 and the upper clad layer 4 are made opposite each other. That is, a lattice constant of the lower clad layer 2, the quantum well layer 3 and the upper clad layer 4 is made to change. Thereby, cooling effect of electron is improved due to distortion of crystal. Furthermore, a loss through Auger process can be reduced greatly due to distortion of crystal at an interface of the quantum well layer 3, the lower clad layer 2 and the upper clad layer 4. Accordingly, it is possible to inject electron (carrier) effectively and to reduce an oscillation threshold current density by using a distortion superlattice structure as an active layer. |
| 公开日期 | 1990-12-26 |
| 申请日期 | 1989-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | KATSUYAMA TSUKURU. Semiconductor laser device. JP1990310985A. 1990-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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