Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NOGUCHI ETSUO; FUKUDA MITSUO; NAKANO YOSHINORI; TSUZUKI NOBUYORI |
| 发表日期 | 1988-04-09 |
| 专利号 | JP1988079391A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the formation of a thermally deteriorated layer at the side surface of an active layer and resultant deterioration in characteristics, by forming the side surface of the active layer in mesa stripe shaped laminated bodies so that the side surface is inner than the extended line of the side surface of a clad layer thereon. CONSTITUTION:On a semiconductor substrate 1, a clad layer, buffer layer or photoconductive layer 2, an active layer 3, a clad layer 4 and an electrode layer 5 are sequentially formed. Then the layers are etched, and a mesa stripe shape is formed. Thereafter, the side surface of the active layer 3 is etched so that the side surface is inner than the extended line of the side surface of the clad layer 4, which is located on the layer 3. Then, a light confiningment layer 16, a current blocking layer 17 and an electrode layer 18 are formed on the side surfaces of the laminated bodies. In this method, a thermally deteriorated layer is not formed at the side surface part of the active layer. Therefore, deterioration of the characteristics can be prevented. Since the width of the active layer is narrower than the clad layer 4, the threshold current value can be made low. |
| 公开日期 | 1988-04-09 |
| 申请日期 | 1986-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89043]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,FUKUDA MITSUO,NAKANO YOSHINORI,et al. Semiconductor laser and manufacture thereof. JP1988079391A. 1988-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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