Semiconductor laser device
文献类型：专利
| 作者 | KUME MASAHIRO; ITO KUNIO; SHIBUYA TAKAO |
| 发表日期 | 1988-01-06 |
| 专利号 | JP1988001092A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the damage of an end surface by forming a guide layer between an active layer and a clad layer. CONSTITUTION:Two-time liquid phase epitaxial growth is conducted on a p-type GaAs substrate An n-type GaAs block layer 2 is grown on the substrate 1, to which a mesa-shaped projection 10 is shaped through etching, in first liquid growth. A groove 12 and a ridge 11 are manufactured through etching, and a double hetero-junction containing a guide layer 9 is grown by second liquid growth. An AuZn electrode 7 is evaporated on the substrate 1 side and an AuGeNi electrode 8 on the n-type GaAs contact layer 6 side after crystal growth, and a resonator is formed through cleavage. Accordingly, the n-type guide layer 9 is shaped between an active layer 4 and an n-type clad layer 5, thus reducing damage by the high optical density of laser beams of the outgoing section of a crystal end surface. |
| 公开日期 | 1988-01-06 |
| 申请日期 | 1986-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89048]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUME MASAHIRO,ITO KUNIO,SHIBUYA TAKAO. Semiconductor laser device. JP1988001092A. 1988-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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