Semiconductor light emitting element
文献类型：专利
| 作者 | UMEO ITSUO; TANAHASHI TOSHIYUKI |
| 发表日期 | 1982-12-06 |
| 专利号 | JP1982198688A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To decrease a wattless current and to obtain the element having the high light emitting efficiency by providing a groove, which enters a substrate, in an N type InP substrate, on which P type and N type InP layers are grown, providing an InGaAsP active layer in said groove through an N type InP layer, and surrounding it by the N type InP layer. CONSTITUTION:On an N type InP substrate 31, a P type InP layer 34, an N type InP layer 35, and a P type InP layer 36 are layered and epitaxially grown in a liquid phase. The groove, which enters the substrate 31 from the central part of the surface of the layer 36 and has a desired stripe width, is formed. Then the inside of the groove is buried by an N type InP layer 32. An InGaAs active layer 33 is deposited on the surface of the layer 32. An N type InP layer 37 and an InGaAsP layer 38 having the same composition of the layer 33 are deposited on the layer 36 surrounding said layters. Thereafter, a P type InP layer 39 is grown on the entire surface so as to bury the still remaining groove on the layer 33. The surface is coated bya P type InGaAsP layer 40. A P side electrode 102 is deposited on the 40, and an N type electrode 101 is deposited on the back surface of the substrate 3 |
| 公开日期 | 1982-12-06 |
| 申请日期 | 1981-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UMEO ITSUO,TANAHASHI TOSHIYUKI. Semiconductor light emitting element. JP1982198688A. 1982-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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