光増幅器
文献类型：专利
| 作者 | 西 研一; 藤原 雅彦 |
| 发表日期 | 1996-03-27 |
| 专利号 | JP1996031656B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光増幅器 |
| 英文摘要 | PURPOSE:To contrive reduction in incident polarization dependency of characteristics of the title light amplifier by a method wherein an active layer is formed into the quantum-well structure consisting of the first and the second semiconductors which are specifically prescribed, the first semiconductor receives the stress of planar tensile property generated by the dismatching of a lattice, and the energy value between the ground sub-band of a conduction band and the ground sub-band of a light hole band is made smaller than that located between the ground sub-band of a conductive band and the ground sub-band of a heavy hole band. CONSTITUTION:A multilayer quantum well(MQW) active layer 104 is formed by alternately laminating in 6 periods a GaAs quantum well layer 110 and an In0.2Ga0.32Al0.48As barrier layer 111, and the film thickness of each layer is set at the prescribed value. The quantum well layer 110 is subjected to tensile strain by the dismatching of a lattice with an In0.1Al0.36Ga0.54As clad layer 103, and as a result, a light hole band is energetically positioned upper than a heavy hole band. In this case, the ground sub-band 201 of the light hole band is also energetically positioned upper than the ground sub-band of the heavy hole band 202, and as the transition when a carrier is implanted, the transition located between each sub-band of the electron-light-hole band becomes the main transmission. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1988-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89050]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 西 研一,藤原 雅彦. 光増幅器. JP1996031656B2. 1996-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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