Semiconductor optical integrated circuit device
文献类型：专利
| 作者 | KIMURA SOICHI; SHIDA ATSUSHI |
| 发表日期 | 1989-06-13 |
| 专利号 | JP1989150356A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical integrated circuit device |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold value of a laser, to shorten the period of processes, and to decrease a stray capacity and a contact resistance by forming layers for forming a transistor and layers for forming the laser simultaneously by one epitaxial growth. CONSTITUTION:In a transistor region 15 of the left side of a photosensitive resin 8, an N-type InP layer 2 and an N-type InGaAsP layer 3 are collector layers, a P-type InGaAsP layer 4 is a base layer, a P-type impurity diffused layer 7 is a graft base layer, and an N-type InP layer 5 is an emitter layer. In a laser region 16 of the right side, the layer 2 is an N-type clad layer, the layer 3 is an active layer, the layer 4 is a waveguide layer, and a P-type impurity diffused layer 6 is a clad layer. Accordingly, a region 15 is an HBT (Hetero junction-Bipolar-Transistor) structure, and a region 16 is a double hetero junction. Thus, the layers of the HBT and the layers of the laser are simultaneously formed by one epitaxial growth. |
| 公开日期 | 1989-06-13 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89060]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,SHIDA ATSUSHI. Semiconductor optical integrated circuit device. JP1989150356A. 1989-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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