中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Liquid phase epitaxial growth apparatus

文献类型:专利

作者YAMAMOTO KOUSAKU; KAWABATA YOSHIO; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; SHINOHARA KOUJI
发表日期1983-03-16
专利号JP1983045192A
著作权人FUJITSU KK
国家日本
文献子类发明申请
其他题名Liquid phase epitaxial growth apparatus
英文摘要PURPOSE:To execute efficient growth, by providing a first slidable member having a liquid phase material reservoir on the upper face of the support of a base plate having a through hole for installing a base plate on the inside wall, and a second slidable member having a liquid phase used material reservoir on the lower face, and adjusting relation of arrangement of both reservoirs with respect to the through hole. CONSTITUTION:A first slidable member 21 having reservoirs 25, 27, 29 for containing a liquid phase material for being used for crystal growth is provided on the upper face of the support 23 of a base plate having a through hole 36 in the vertical direction for enabling installation of a base plate 35 on the inside wall. A second slidable member 22 having a reservoir 30 for containing a used liquid phase material is provided along the lower face. The arrangement relation of the reservoirs of the 2 members 21, 22 is adjusted with respect to the hole 36 of the support 23 to successively drop the material out of the reservoirs 25, 27, 29 of the member 21 through the hole 36 to the reservoir 30 of the member 22.
公开日期1983-03-16
申请日期1981-09-10
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89068]  
专题半导体激光器专利数据库
作者单位FUJITSU KK
推荐引用方式
GB/T 7714
YAMAMOTO KOUSAKU,KAWABATA YOSHIO,NISHIJIMA YOSHITO,et al. Liquid phase epitaxial growth apparatus. JP1983045192A. 1983-03-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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