Liquid phase epitaxial growth apparatus
文献类型:专利
作者 | YAMAMOTO KOUSAKU; KAWABATA YOSHIO; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; SHINOHARA KOUJI |
发表日期 | 1983-03-16 |
专利号 | JP1983045192A |
著作权人 | FUJITSU KK |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Liquid phase epitaxial growth apparatus |
英文摘要 | PURPOSE:To execute efficient growth, by providing a first slidable member having a liquid phase material reservoir on the upper face of the support of a base plate having a through hole for installing a base plate on the inside wall, and a second slidable member having a liquid phase used material reservoir on the lower face, and adjusting relation of arrangement of both reservoirs with respect to the through hole. CONSTITUTION:A first slidable member 21 having reservoirs 25, 27, 29 for containing a liquid phase material for being used for crystal growth is provided on the upper face of the support 23 of a base plate having a through hole 36 in the vertical direction for enabling installation of a base plate 35 on the inside wall. A second slidable member 22 having a reservoir 30 for containing a used liquid phase material is provided along the lower face. The arrangement relation of the reservoirs of the 2 members 21, 22 is adjusted with respect to the hole 36 of the support 23 to successively drop the material out of the reservoirs 25, 27, 29 of the member 21 through the hole 36 to the reservoir 30 of the member 22. |
公开日期 | 1983-03-16 |
申请日期 | 1981-09-10 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/89068] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU KK |
推荐引用方式 GB/T 7714 | YAMAMOTO KOUSAKU,KAWABATA YOSHIO,NISHIJIMA YOSHITO,et al. Liquid phase epitaxial growth apparatus. JP1983045192A. 1983-03-16. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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