Semiconductor laser
文献类型：专利
| 作者 | IKEDA KENJI; OOSAWA JIYUN; TAKAHASHI KAZUHISA; SUZAKI WATARU |
| 发表日期 | 1984-03-27 |
| 专利号 | JP1984052894A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To avoid the surface recombination of an injection carrier preventing an end breakdown from happening to secure high output restraining leakage current to be concentrated in active layers by a method wherein an end forming a resonator is formed into a part made of a crystalline material making the forbidden band width of the material wider than that of the active layers. CONSTITUTION:An N type Al0.35Ga0.65As layer 111, a GaAs layer 112, a P type Al0.35Ga0.65As layer 113, a P type GaAs layer 114 are successively grown on an N type GaAs substrate crystal 10. A P type GaAs layer 114 is coated with An Si3N4 film 16 removing all parts excluding the width W and the length L further removing all the layers down to the surface of the N type GaAs substrate crystal 10 by etching process utilizing the residual Si3N4 film as a mask. Secondly, an N type Al0.5Ga0.5As layer 12 is grown and then the Si3N4 film 16 is removed forming another Si3N4 film 17 again all over the surface while Zn etc. is diffused through the intermediary of a hole opened centering on a strip mesa 11 forming a P type layer 114a and a P type Al0.5Ga0.5As region 121 respectively on the surface of the P type GaAs layer 114 and the N type Al0.5Ga0.5As region 12. Finally after forming a P side electrode 14 and an N side electrode 15, a laser oscillating surface may be formed completing the element. |
| 公开日期 | 1984-03-27 |
| 申请日期 | 1982-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89069]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | IKEDA KENJI,OOSAWA JIYUN,TAKAHASHI KAZUHISA,et al. Semiconductor laser. JP1984052894A. 1984-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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