Semiconductor laser
文献类型：专利
| 作者 | TSUKIKI KAZUNORI |
| 发表日期 | 1988-07-12 |
| 专利号 | JP1988168069A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a laser device to generate a beam wit its cross section quite round for an enhanced for field pattern resolution by a method wherein protrusions are provided on the bottom of a stripe and the surface is flattened of a semiconductor layer that is grown immediately above a semiconductor substrate. CONSTITUTION:Just above a semiconductor substrate 1 wherein a stripe 7 is provided, a semiconductor clad layer 2 is grown of aluminum gallium arsenide. The semiconductor substrate 1 is then placed in an N-type aluminum gallium arsenide atmosphere for crystal growth in an organic metal vapor growth process. The result is protrusions 8 of a rectangular cross section on the bottom 7a of the stripe 7. The protrusions 8 are parallelly arranged at a constant interval and their line extends along the length of the strip 7. The surface of the clad layer 2 is thereby flattened and the surfaces of an active layer 3, a clad layers 4 and of a cap layer 5 which are to be formed one after the other on the flattened surface of the clad layer 2, will also be flat. |
| 公开日期 | 1988-07-12 |
| 申请日期 | 1986-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89078]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | TSUKIKI KAZUNORI. Semiconductor laser. JP1988168069A. 1988-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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