Edge emitting semiconductor laser with short gain region
文献类型：专利
| 作者 | FRANCIS, DANIEL A.; VERMA, ASHISH K. |
| 发表日期 | 2007-03-01 |
| 专利号 | US20070047606A1 |
| 著作权人 | FRANCIS DANIEL A |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge emitting semiconductor laser with short gain region |
| 英文摘要 | Systems and methods for short length gain regions in edge emitting lasers. After forming the lower layers of a laser on a substrate, the active layer is formed. The active layer is then selectively etched. The unetched portion of the active layer corresponds to an active region of the laser. The etched portions are then selectively regrown with a material that is transparent to light emitted by the active region. The active layer thus includes an active region and an inactive region. Next, the upper layers are grown or formed over the active layer. Selective regrowth of the active layer enables a length of the active region to be independent of the cleaved length of the laser. This reduces current and power requirements of the laser. |
| 公开日期 | 2007-03-01 |
| 申请日期 | 2005-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89089]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FRANCIS DANIEL A |
| 推荐引用方式 GB/T 7714 | FRANCIS, DANIEL A.,VERMA, ASHISH K.. Edge emitting semiconductor laser with short gain region. US20070047606A1. 2007-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。