Semiconductor laser
文献类型：专利
| 作者 | WADA, MITSUGU; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2000-02-22 |
| 专利号 | US6028874 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compressive strain on the GaAs substrate. Each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compressive strain induced in the active layer. The ratio of V group elements contained in the first optical waveguide layer is the same as that in the first barrier layer, and the ratio of V group elements contained in the second optical waveguide layer is the same as that in the second barrier layer. |
| 公开日期 | 2000-02-22 |
| 申请日期 | 1997-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | WADA, MITSUGU,FUKUNAGA, TOSHIAKI. Semiconductor laser. US6028874. 2000-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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