Manufacture of 180× mode phase locked type semiconductor laser
文献类型：专利
| 作者 | KAISE KIKUO |
| 发表日期 | 1991-08-13 |
| 专利号 | JP1991185779A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of 180× mode phase locked type semiconductor laser |
| 英文摘要 | PURPOSE:To enable not only a semiconductor laser of this design to be easily manufactured but also semiconductor layers not to be exposed to outside by a method wherein stripe-like parallel grooves are formed so as to expose a part of an optical guide layer, and a light absorbing constriction layer is epitaxially grown filling the grooves. CONSTITUTION:A first clad layer 12 is formed on an N-type GaAs substrate 11, an active layer 13 is formed thereon, and a second lower clad layer 14A, an optical guide layer 15, and second upper clad layer 14B are successively formed thereon through a continuous epitaxial growth. Stripe-like grooves 16 are formed in parallel through a selective etching method so deep as to expose the optical guide layer 15 traversing the second upper clad layer 14B. Then, the grooves 16 are filled with light absorbing constriction layers 17 to make the surface nearly flat. By this setup, a semiconductor laser of this design can be manufactured through a single, continuous epitaxial growth process, so that the laser can be easily manufactured and semiconductor layers can be prevented from being exposed to outside. |
| 公开日期 | 1991-08-13 |
| 申请日期 | 1989-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89093]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | KAISE KIKUO. Manufacture of 180× mode phase locked type semiconductor laser. JP1991185779A. 1991-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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