Semiconductor device and fabrication method
文献类型：专利
| 作者 | LIU, HUIYUN; SEEDS, ALWYN JOHN; POZZI, FRANCESCA |
| 发表日期 | 2016-07-26 |
| 专利号 | US9401404 |
| 著作权人 | UCL BUSINESS PLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and fabrication method |
| 英文摘要 | A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10−8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface. |
| 公开日期 | 2016-07-26 |
| 申请日期 | 2012-02-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89110]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UCL BUSINESS PLC |
| 推荐引用方式 GB/T 7714 | LIU, HUIYUN,SEEDS, ALWYN JOHN,POZZI, FRANCESCA. Semiconductor device and fabrication method. US9401404. 2016-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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