Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MORIMOTO MASAHIRO |
| 发表日期 | 1988-08-26 |
| 专利号 | JP1988207187A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce parasitic capacitance, and to enable modulation at high speed by coating the top section of a current injection region with a conductive member and coating a side section with an insulating film. CONSTITUTION:A semiconductor substrate 13 is etched, using a mesa-groove etching protective film 14 consisting of a conductive member as a mask, thus forming a mesa groove 15 and constricting a current injection region 16. An insulating film 17 is shaped to protect the surface of the mesa groove 15, only the insulating film coating the protective mask 14 is removed selectively through etching, and the protective film is used as an electrode. Consequently, patterning for shaping a contact window requiring positioning with high precision and patterning for forming an electrode are unnecessitated by employing the conductive member used as the mesa-groove etching protective mask as an insulating- film protective mask and the electrode for the current injection region continuously, thus simplifying a manufacturing process. Since the margin of positioning need not be considered, the width of the current injection region can be narrowed extremely. Accordingly, parasitic capacitance is reduced. |
| 公开日期 | 1988-08-26 |
| 申请日期 | 1987-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MORIMOTO MASAHIRO. Semiconductor laser and manufacture thereof. JP1988207187A. 1988-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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