Semiconductor laser
文献类型：专利
| 作者 | DOI KOUNEN |
| 发表日期 | 1985-11-05 |
| 专利号 | JP1985220983A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser having excellent optical transmission characteristics and high reliability by forming a clad layer constituted by a non-oxidizing compound semiconductor while being adjoined to an active layer constituted by a compound semiconductor containing an oxidizing element. CONSTITUTION:An InGaP buffer layer 2, a GaAlAs active layer 3 and a P- InGaP clad layer 4 are grown continuously on an InGaP substrate 1, thus manufacturing a double hetero-structure wafer. An SiO2 film 5 is applied on the surface of the wafer, a region 6 in which Zn is diffused in a striped mannr is formed, and a P side electrode 7 and an N side electrode 8 are shaped. According to the constitution, since the clad layer 4 does not contain an element easy to be oxidized such as Al, the end surface of a mirror is not oxidized, thus obtaining an excellent laser beam. |
| 公开日期 | 1985-11-05 |
| 申请日期 | 1985-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89116]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | DOI KOUNEN. Semiconductor laser. JP1985220983A. 1985-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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