Semiconductor laser device
文献类型：专利
| 作者 | KOJIMA KEISUKE; ARANISHI TOSHIO; HISAMA KAZUO |
| 发表日期 | 1986-11-12 |
| 专利号 | JP1986255086A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To change the laser oscillation wavelength easily with high yield by forming a phase control electrode on the surface of a clad layer and controlling the phase of the light propagated through a waveguide layer by injecting a current into said electrode. CONSTITUTION:When a phase control electrode 9 exists, a laser oscillation wavelength is expressed by the formula k/{b-jgamma.coth (gammaL)} exp {-2jphi)=1, where k is a coupling constant, phi is a phase shift quantity of the light propagated through a waveguide layer 3. In equations b=deltabeta+jg,gamma=(k-b), deltabeta is the slip of laser oscillation frequency from Bragg wavelength which is converted into the number of waves, g is a threshold value gain, and L is a length of Bragg reflection part. The laser oscillation wavelength changes with Bragg wavelength=(pitch of diffraction gratings)X(valid reflectance of a waveguide layer)X(degree of diffraction gratings)/2 as the center, according to the phase shift quantity phi. The quantity phi changes the current injected into the electrode 6 and shifts the phase of the light propagated through the layer 3, thereby enabling the change of the laser oscillation wavelength by changing the conditions for laser oscillation. |
| 公开日期 | 1986-11-12 |
| 申请日期 | 1985-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89124]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,ARANISHI TOSHIO,HISAMA KAZUO. Semiconductor laser device. JP1986255086A. 1986-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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