Manufacture of semiconductor laser element
文献类型：专利
| 作者 | WADA HIROSHI; OGAWA HIROSHI; OSHIBA SAEKO; HORIKAWA HIDEAKI |
| 发表日期 | 1988-11-17 |
| 专利号 | JP1988281489A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable the manufacture of a DFB laser capable of high output operation, by a method wherein an active layer and a light wave guide layer are formed in a V-shaped groove formed on a current constriction layer, a multilayer resist is formed on the light wave guide layer, and then a grating is formed by exposing and developing. CONSTITUTION:A p-InP buffer layer 2, an n-InP current constricting layer 3 and a p-InP current constricting layer 4 are crystal-grown in order on a p-InP substrate 1, and a V-shaped groove 5 is formed by the usual photolithography and wet etching. In the V-shaped groove 5, the following are grown in order by a liquid phase crystal growth method; a p-InP clad layer 6, a p-GaInAsP active layer 7 and n-GaInAsP light wave guide layer 8. On the curved surface of the layer 8, a multilayer resist is formed, wherein an OCD layer 10 is arranged between resist layers 9, 10 is formed by a reactive ion etching of, e.g., three-layer structure. Then by applying a holographic exposure method, the resist layer is subjected to exposing and developing to form a grating whose pitch is 0.2-0.24mum. The resist layer 9 and the OCD layer 10 are eliminated, and, as the third crystal growth, an n-InP clad layer 12 and an n-GaInAsP cap layer 13 are grown to complete a device. |
| 公开日期 | 1988-11-17 |
| 申请日期 | 1987-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89125]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,OGAWA HIROSHI,OSHIBA SAEKO,et al. Manufacture of semiconductor laser element. JP1988281489A. 1988-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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