Manufacture of semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1989-12-19 |
| 专利号 | JP1989313989A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To reduce oscillation threshold current by a method wherein, by selectively eliminating an impurity introduced region being a low resisrance layer, the leak current flowing in said region is decreased. CONSTITUTION:On a semiconductor substrate 1, a first clad layer 2 is formed; thereon, a quantum well active layer 3 containing at least one quantum well is formed; further thereon, a second clad layer 4 is formed. After the quantum well active layer 3 is selectively disordered by introducing impurity from above the second clad layer 4 of the region except a stripe turning to an oscillation region, the impurity introduced layer 7 except the vicinity of the stripe is selectively etched and eliminated. Thereby, the leak current can be decreased, and the low threshold current oscillation is enabled. |
| 公开日期 | 1989-12-19 |
| 申请日期 | 1988-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89126]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Manufacture of semiconductor laser. JP1989313989A. 1989-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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