Semiconductor light emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE; SODA HARUHISA |
| 发表日期 | 1987-07-10 |
| 专利号 | JP1987155583A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve a light taking out efficiency and increase a device reliability, making the reflection index of a first cleavage surface of light taking out side smaller than that of the region of a second cleavage surface side. CONSTITUTION:Corrugation 10 is partly formed on the boundary surface between a substrate 1 and a light waveguide layer 2. In the case where the optical axis length of a laser is 300nm, the period and the depth of the corrugation are 2,000Angstrom and 500Angstrom respectively, in the range of about 100mum in contact with a cleavage surface 9. By a liquid phase epitaxial growth method, a 0.15mum thick light waveguide layer 2, a 0.1mum thick undoped InGaAsP layer 3, a 2mum thick p-InP clad layer 4 and a 0.2mum thick p-InGaAsP contact layer 5 are laminated in order. The reflection index of a cleavage surface 8 is 0.31 in this laser structure, but that of the cleavage surface 9 containing the corrugation can be 0.5, which improves light extracting efficiency. A dielectric film 11 of low reflection index can be laminated on the cleavage surface 8 from which the light is extracted. |
| 公开日期 | 1987-07-10 |
| 申请日期 | 1985-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,SODA HARUHISA. Semiconductor light emitting device. JP1987155583A. 1987-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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