Semiconductor laser device
文献类型：专利
| 作者 | YOSHIHARA KAZUHIRO; KUBOTA KEIICHI; TANAKA HIDEO; NOMURA TADASHI; INOUE RYUICHI; NAGATANI KIYOSHI |
| 发表日期 | 1989-08-22 |
| 专利号 | JP1989208886A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To independently detect individual optical outputs at a low stroke by introducing lights emitted from a plurality of light emitting points to different waveguides, and detecting them by different photodetectors. CONSTITUTION:Lights emitter from a plurality of light emitting points 1a, 1b, 1c are introduced into optical waveguides 3a, 3b, 3c by diffraction grating couplers 5a, 5b, 5c formed, for example, by electron beam lithography on the waveguides formed, for example by diffusing titanium on a glass, dielectric or conductor substrate 2, and further propagated in the waveguides. The lights emitted from the waveguides are introduced to photodetectors 4a, 4b, 4c formed on the substrate 2, and independently detected. Since the light emitting points of a semiconductor laser can be approached to the incident ends of the waveguide, the roundabout introduction of the lights emitted from other light emitting point can be suppressed, and the individual light emitting point outputs can be detected at a low stroke. |
| 公开日期 | 1989-08-22 |
| 申请日期 | 1988-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89130]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIHARA KAZUHIRO,KUBOTA KEIICHI,TANAKA HIDEO,et al. Semiconductor laser device. JP1989208886A. 1989-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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