Optical integrated circuit
文献类型：专利
| 作者 | YAMAMOTO ATSUYA; SUGINO TAKASHI; YOSHIKAWA AKIO; KUME MASAHIRO; HIROSE MASANORI; NAKAMURA AKIRA |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196888A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit |
| 英文摘要 | PURPOSE:To prevent the generation of difficulty in a lithographic process by laminating and forming a semiconductor laser and an FET for drive in the direction of crystal growth. CONSTITUTION:A P-type buffer layer 3, a P-type clad layer 4, an active layer 5, an N-type clad layer 6, an N-type contact layer 7, a non-doped buffer layer 8 and an N-type active layer 9 are grown successively onto a P-type GaAs substrate 2. An FET section is shaped to the active layer 9, and the contact layer 7 is exposed through etching. A drain electrode 10 combining an N side electrode, gate electrodes 11, 12, source electrodes 13, 14 and a P-type electrode 1 are formed. Since the FET is shaped to the upper sections of both sides of a striped current injection region S, a semiconductor laser and the FET for drive can be integrated in approximately the same size as the laser. A stepped section between the FET and the laser is reduced, thus preventing the difficulty of lithography. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89131]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | YAMAMOTO ATSUYA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Optical integrated circuit. JP1989196888A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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