Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MANNOU MASAYA; OGURA MOTOTSUGU |
| 发表日期 | 1990-08-24 |
| 专利号 | JP1990213181A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve characteristics and the reproducibility and reliability thereof in any oscillation wavelength by providing a double hetero structure constructed of a lower-side clad layer using (AlGa)As layer and of an active layer and a first upper- side clad layer, and further an oxidation preventing layer and an internal current narrowing layer having a larger Al composition ratio than the oxidation preventing layer, on a GaAs substrate. CONSTITUTION:A double hetero structure wherein an (AlGa)As layer is laid as an active layer 3 and this active layer 3 is held between an (AlGa)As clad layer 2 of a first conductivity type being different in a composition ratio from the layer 3 and a first (AlGa)As clad layer 4 of a second conductivity type is provided on a GaAs substrate 1 of the first conductivity type, and an (AlxGaIn)P oxidation preventing layer 9 of the second conductivity type and an (AlyGaIn)P internal current narrowing layer 10 of the first conductivity type are provided on the upper side of the active layer 3. Herein, 0<=x<=y<=0.5. According to this constitution, light absorption in the oxidation preventing layer 9 does not occur if the light is in a region of a wavelength which can be oscillated, and the internal current narrowing layer 10 can be made to have a larger forbidden band width and a smaller refractive index than the first clad layer 4. Accordingly, it is possible to execute a horizontal mode control being stable in a refractive index guide. |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89134]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | MANNOU MASAYA,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1990213181A. 1990-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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