Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | IKEDA TOSHIYUKI |
| 发表日期 | 1988-03-29 |
| 专利号 | JP1988069287A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To form a diffraction grating having high feedback rate by epitaxially growing a second compound semiconductor layer on a first compound semiconductor surface, then forming it in a corrugating shape, and then epitaxially growing a third compound semiconductor layer thereon. CONSTITUTION:A p-type InGaAsP layer having smaller forbidden band width than an n-type InP substrate 1 and larger refractive index is epitaxially grown on the substrate Then, it is etched with resist mask 11, and a corrugation 2C which periodically penetrates a semiconductor layer 3 is formed. Then, a p-type InGaAsP guide layer 4 is epitaxially grown on the layer 3. A diffraction grating surface is composed of a hetero junction boundary 2D of the substrate 1 and the layer 3 or 4. Since the hetero junction boundary of the substrate 1 and the layer 3 is epitaxially grown, it can prevent a crystal defect from occurring due to heating, thereby improving its feedback rate. |
| 公开日期 | 1988-03-29 |
| 申请日期 | 1986-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IKEDA TOSHIYUKI. Manufacture of semiconductor light-emitting device. JP1988069287A. 1988-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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