Semiconductor laser element
文献类型：专利
| 作者 | YOSHIDA TOMOHIKO; MORIMOTO TAIJI |
| 发表日期 | 1989-03-31 |
| 专利号 | JP1989086585A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent beam absorption around end faces from occurring, and operate at high output stably for a long period by providing a structure wherein an active layer is laminated with curvature at an end face in the vicinity of an end face of beam irradiation at least of one side, and only the curved end domain of the active layer of at least the one side is removed. CONSTITUTION:GaAlAs active layer 4, N-type GaAlAs clad layer 5 and N-type GaAs cap layer 6 are sequentially formed to growth. The active layer 4 is curved at a channel 9. Electrodes 10, 11 are deposited on the outer surface, the wafer is cleaved at about the center of the channel 9 to form an end face of one side, the other end face is cleaved into an appropriate length for resonance, to obtain separated elements. The end face of the side of the curved active layer is etched and the curved portion of the active layer 4 is removed. In a multiple structure, beam is confined in the active layer 4 of a great refractive index, but the active layer in the device is cut around the end face, hence a beam coming in straighly is radiated in the clad layer 5 around the end face. Consequently, the beam is not absorbed around the end face, and a stable operation is assured at a high output for a long time. |
| 公开日期 | 1989-03-31 |
| 申请日期 | 1987-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOHIKO,MORIMOTO TAIJI. Semiconductor laser element. JP1989086585A. 1989-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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