Semiconductor laser element and its manufacture
文献类型：专利
| 作者 | EGUCHI KAZUHIRO |
| 发表日期 | 1989-07-10 |
| 专利号 | JP1989173685A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its manufacture |
| 英文摘要 | PURPOSE:To reduce a series resistance value of a laser element by manufacturing a double-heterojunction semiconductor laser element by using a structure where an InAs layer whose band gap is small is formed as a contact layer and an InAs1-zPz composition transition layer is formed between an InAs contact layer and an InP clad layer. CONSTITUTION:In order to use InAs whose band gap is small as a contact layer 18, the height of a Schottky barrier can be lowered and an impurity of high concentration can be doped. An InAs1-zPz layer 17 is formed between an InP layer 14 and the InAs layer 18, and its composition is changed gradually from InP to InAs; by this setup, the band gap can be changed continuously between InP and InAs; obstruction of a movement of a carrier due to discontinuity of a band is eliminated. In this way, a low-resistance electrode 20 can be formed with reference to a P-type; a series resistance value of a laser element can be lowered. |
| 公开日期 | 1989-07-10 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | EGUCHI KAZUHIRO. Semiconductor laser element and its manufacture. JP1989173685A. 1989-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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