Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MORIMOTO TAIJI; YANO MORICHIKA |
| 发表日期 | 1985-12-04 |
| 专利号 | JP1985245189A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To generate a laser light having no astigmatism by setting the refractive indexes of inside and outside of narrow groove of a double hetero junction, refractive ratio to the prescribed values and oscillating in stable basic mode to high output. CONSTITUTION:An N type GaAs current blocking layer 12 is laminated on a P type GaAs substrate 11, 2-stage channel 21 of wide width groove 19 and V- shaped narrow width groove 20 are formed by etching, and a P type GaAlAs clad layer 13, a P type GaAlAs active layer 14, an N type GaAlAs clad layer 15, and N type GaAs gap layer in a double hetero configuration are laminated. The real number section of the double refractive index difference of the inside and outside of the groove 20 is 4X10 or larger, and the conjugate section is 4X10 or lower. Then, the mode is stabilized without influence of the variation in the carrier distribution, and when the ratio of the real number section and the conjugate section is set to 5 or higher, a beam waist falls without the ultafine distance from the end. As a result, stable basic mode oscillation occurs to high output, and a laser light having no astigmatism that the beam waists coincide at the end is generated. |
| 公开日期 | 1985-12-04 |
| 申请日期 | 1984-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89151]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1985245189A. 1985-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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