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文献类型：专利
| 作者 | YAMAMOTO SABURO; HAYASHI HIROSHI; YANO MORICHIKA |
| 发表日期 | 1992-03-19 |
| 专利号 | JP1992016033B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To contrive formation of a low threshold value current as well as stabilization of lateral mode thereof for the titled semiconductor laser element by a method wherein, after a cap layer having an appropriate AlAs mol ratio has been thickly formed, the GaAs substrate with which distortion will be reduced is removed by performing an etching, thereby enabling to reduce the distortion generated on the active layer of the titled laser element. CONSTITUTION:A reverse conductive N type GaAs current blocking layer 12 to be used for current concentration, a P type GaAs clad layer 13 to be used to limit an active layer using a hetero-junction, a GaAs actived layer 14 for laser oscillation, an N type GaAlAs clad layer 15, and an N type GaAlAs cap layer 16 for ohmic contact are successively laminated on a P type GaAs layer 2 Also, an N side electrode 17, which will be used to give a driving current to the active layer 14, a P side electrode 18 and a V-channel 19 are formed. All the multilayer crystal formed on the region from a P type GaAs layer to the cap layer 16 consists of an epitaxially grown layer, and the cap layer 16 is formed very thickly. |
| 公开日期 | 1992-03-19 |
| 申请日期 | 1982-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89155]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,HAYASHI HIROSHI,YANO MORICHIKA. -. JP1992016033B2. 1992-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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