Semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA; KIMURA SOICHI |
| 发表日期 | 1991-01-29 |
| 专利号 | JP1991020095A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form a semiconductor laser in one epitaxial growth and to improve mass producibility by providing a striped optical guide layer adjacent to an active layer and by carrying out light confinement making an equivalent refractive index of the section high. CONSTITUTION:Four layers consisting of an N-type InGaAsP optical guide layer 2, an N-type InP clad layer 3, an InGaAsP active layer 4, and a P-type InP clad layer 5 are formed on an N-type InP substrate 1 whereto a striped mesa 6 is formed. The optical guide layer 2 is formed so that a thickness of an upper part of the mesa 6 is 0.1mum and the clad layer 3 is made thin on the upper part of the mesa 6 and thick on other regions. Therefore, when a thin optical guide layer is made adjacent to the active layer 4, an equivalent refractive index increases there, thereby forming a refractive index difference optical waveguide path having a high refractive index at the mesa section 6. If a zinc diffusion layer 8 is provided and a current is collected to the mesa section 6, a semiconductor laser having a light confinement mechanism at the mesa section 6 can be formed in one epitaxial growth and mass producibility improves. |
| 公开日期 | 1991-01-29 |
| 申请日期 | 1989-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA,KIMURA SOICHI. Semiconductor laser. JP1991020095A. 1991-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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