Semiconductor laser element
文献类型：专利
| 作者 | KINOSHITA HIDEAKI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220393A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To ensure stable horizontal transverse mode controllability, and to lower a threshold by the sufficient throttling of injection currents by forming an optical guide layer with a rib striped type projecting section and shaping a diffusion region having the same conduction type as the optical guide layer into a reverse bias type second clad layer formed onto the optical guide layer. CONSTITUTION:An n-type AlxGa1-xAs first clad layer 2, an un-doped AlyGa1-yAs active layer 3 and a p-type AlzGa1-zAs optical guide layer 11 are grown on an n-type GaAs substrate 1 in succession. A striped mask pattern 12 coating only a section in a current injection region on the optical guide layer 11 is shaped. The exposed section of the optical guide layer is etched while using a mask pattern as a protective film to form a groove, and an n-type AlxGa1-xAs second clad layer 9 and a p-type GaAs contact layer 7 are grown on the optical guide layer 11 shaped in rib structure. A mask pattern is formed, Zn is diffused selectively until it reaches a rib section in the optical guide layer 11, and a p-type diffusion region 10 is shaped, thus completing laser element structure. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89165]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI. Semiconductor laser element. JP1986220393A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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