Formation of semiconductor distributed reflection mirror and device used therein
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; UENOHARA HIROYUKI |
| 发表日期 | 1992-09-03 |
| 专利号 | JP1992247403A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of semiconductor distributed reflection mirror and device used therein |
| 英文摘要 | PURPOSE:To provide the semiconductor distributed reflection mirror having a high- accuracy central wavelength by obtaining the detection output of the IR intensity expressing the optical thicknesses of semiconductor layers with desired high accuracy and controlling the supply of molecules and atoms by the detection output, thereby forming the semiconductor layers to the optical thicknesses of high accuracy in the case of formation of the semiconductor distributed reflection mirror 21 laminated and formed successively alternately with the semiconductor layers 22H having a high refractive index and the semiconductor layers 22L having a low refractive index on a semiconductor substrate by an epitaxial growth method. CONSTITUTION:The detection output of the optical thicknesses of the semiconductor layers which are being formed on the semiconductor substrate 20 to be used for controlling the supply of the molecules and atoms constituting the semiconductors forming the semiconductor layers is obtd. from the intensity of the IR rays obtd. by passing the IR rays radiated through the semiconductor substrate 20 and the semiconductor layers which are being formed thereon from a substrate heating means 40 through a band-pass filter having the central wavelength equal to the central wavelength of the semiconductor distributed reflection mirror 2 |
| 公开日期 | 1992-09-03 |
| 申请日期 | 1991-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89167]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,UENOHARA HIROYUKI. Formation of semiconductor distributed reflection mirror and device used therein. JP1992247403A. 1992-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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